Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers
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چکیده
منابع مشابه
Charge trapping properties and retention time in amorphous SiGe/SiO2 nanolayers
In this paper, we report on the electrical properties of metal–oxide–semiconductor (MOS) capacitors containing a well-confined 8 nm-thick SiGe amorphous layer (a-SiGe) embedded in a SiO2 matrix grown by RF magnetron sputtering at a low temperature (350 ◦C). Capacitance–voltage measurements show that the introduction of the SiGe layer leads to a significant enhancement of the charge trapping cap...
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ژورنال
عنوان ژورنال: Journal of Physics D: Applied Physics
سال: 2013
ISSN: 0022-3727,1361-6463
DOI: 10.1088/0022-3727/46/9/095306